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ISO 14701:2011
Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness
| Fecha edición: |
2018-10-31
Anulada
|
|---|---|
| Fecha cancelación: | 2018-10-31 |
| Idiomas disponibles: | Inglés |
| Resumen: | ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties. |
| ICS: | 71.040.40 - Análisis químico |
| CTN: | ISO/TC 201/SC 7 - 54662 |
|
Anulaciones Normas |
Es anulada por ISO 14701:2018 |










