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Número de resultados: 118

DIN 50450-9:2021-07  DIN

Estado: Active / 2021-07

Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C<(Index)1>-C<(Index)3>-hydrocarbons in gaseous hydrogen chloride by gaschromatography

DIN 50452-2:2009-10  DIN

Estado: Active / 2019-10

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters

DIN 50455-1:2009-10  DIN

Estado: Active / 2019-10

Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods

DIN 50451-7:2018-04  DIN

Estado: Active / 2018-04

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

DIN 50451-4:2007-02  DIN

Estado: Active / 2017-02

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)

DIN SPEC 1994:2017-02  DIN

Estado: Active / 2017-02

Testing of materials for semiconductor technology - Determination of anions in weak acids

DIN 50451-6:2014-11  DIN

Estado: Active / 2014-11

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NH<(Index)4>F) and in etching mixtures of high-purity ammonium fluoride solution containing hydrofluoric acid

DIN 50451-3:2014-11  DIN

Estado: Active / 2014-11

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS

DIN 50451-2:2003-04  DIN

Estado: Active / 2013-04

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2: Calcium (Ca), cobalt (Co), chromium (Cr), copper (Cu), Iron (Fe), nickel (Ni) and zinc (Zn) in hydrofluoric acid with plasma-induced emission spectroscopy

DIN 50451-1:2003-04  DIN

Estado: Active / 2013-04

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 1: Silver (Ag), gold (Au), calcium (Ca), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS

DIN 50451-5:2010-03  DIN

Estado: Active / 2010-03

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram

DIN 50455-2:1999-11  DIN

Estado: Active / 1999-11

Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists

DIN 50452-1:1995-11  DIN

Estado: Active / 1995-11

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles

DIN 50452-3:1995-10  DIN

Estado: Active / 1995-10

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters

DIN 50450-4:1993-09  DIN

Estado: Active / 1993-09

Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C<(Index)1>-C<(Index)3>-hydrocarbons in nitrogen by gas-chromatography

DIN 50450-2:1991-03  DIN

Estado: Active / 1991-03

Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of oxygen impurity in N<(Index)2>, Ar, He, Ne and H<(Index)2> by using a galvanic cell

DIN 50450-3:1991-03  DIN

Estado: Active / 1991-03

Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of methane impurity in H<(Index)2>, O<(Index)2>, N<(Index)2>, Ar and He by using a flame ionization detector (FID)

DIN 50453-2:1990-10  DIN

Estado: Active / 1990-10

Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method

DIN 50453-1:1990-10  DIN

Estado: Active / 1990-10

Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method

DIN 50450-1:1987-08  DIN

Estado: Active / 1987-08

Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of water impurity in hydrogen, oxygen, nitrogen, argon and helium by using a diphosphorus pentoxide cell

DIN 1715-1:1983-11  DIN

Estado: Active / 1983-11

Thermostat metals; technical delivery conditions

DIN 1715-2:1983-11  DIN

Estado: Active / 1983-11

Thermostat metals; testing the specific thermal curvature

21/30428334 DC  BSI

Estado: Definitive / 2021-07-23

BS EN IEC 62899-203. Printed electronics. Part 203. Materials. Semiconductor ink

BS IEC 62899-503-1:2020  BSI

Estado: Definitive / 2020-09-25

Printed electronics. Quality assessment. Test method of displacement current measurement for printed thin-film transistor

BS IEC 62899-203:2018  BSI

Estado: Revision Underway / 2018-10-10

Printed electronics. Materials. Semiconductor ink

PD IEC TR 60146-1-2:2019  BSI

Estado: Definitive / 2019-11-13

Semiconductor converters. General requirements and line commutated converters. Application guide

19/30393421 DC  BSI

Estado: Definitive / 2019-08-16

BS EN IEC 62899-503-3. Printed electronics. Part 503-3. Quality assessment. Measuring method of contact resistance for the printed thin film transistor by transfer length method

19/30355742 DC  BSI

Estado: Definitive / 2019-04-26

BS IEC 62899-503. Printed Electronics. Part 503. Quality Assessment. Test method for the channel properties of the printed thin-film transistor

BS EN 60146-1-1:2010  BSI

Estado: Definitive / 2010-08-31

Semiconductor converters. General requirements and line commutated converters. Specification of basic requirements

BS EN 62226-2-1:2005  BSI

Estado: Definitive / 2005-02-11

Exposure to electric or magnetic fields in the low and intermediate frequency range. Methods for calculating the current density and internal electric field induced in the human body. Exposure to magnetic fields

DIN 50450-9:2003-04  DIN

Estado: Withdrawn / 2021-07

Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C<(Index)1>-C<(Index)3>-hydrocarbons in gaseous hydrogen chloride by gaschromatography

DIN 50450-9:2020-11  DIN

Estado: Withdrawn / 2021-07

Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C<(Index)1>-C<(Index)3>-hydrocarbons in gaseous hydrogen chloride by gaschromatography / Note: Date of issue 2020-09-25

DIN 50452-2:2008-04  DIN

Estado: Withdrawn / 2019-10

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters / Note: Date of issue 2008-04-14

DIN 50455-1:1991-06  DIN

Estado: Withdrawn / 2019-10

Testing of materials for semiconductor technology; methods for characterizing photoresists; determination of coating thickness with optical methods

DIN 50455-1:2008-04  DIN

Estado: Withdrawn / 2019-10

Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods / Note: Date of issue 2008-04-07

DIN 50452-2:1991-03  DIN

Estado: Withdrawn / 2019-10

Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters

DIN 50443-1:1988-07  DIN

Estado: Withdrawn / 2019-01

Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography

DIN 50441-3:1985-09  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference

DIN 50438-1:1995-07  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen

DIN 50454-3:1994-10  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide

DIN 50440:1998-11  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method

DIN 50454-1:2000-07  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide

DIN 50441-4:1999-03  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth

DIN 50435:1988-05  DIN

Estado: Withdrawn / 2019-01

Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method

DIN 50431:1988-05  DIN

Estado: Withdrawn / 2019-01

Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array

DIN 50437:1979-06  DIN

Estado: Withdrawn / 2019-01

Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method

DIN 50448:1998-01  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe

DIN 50441-2:1998-11  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile

DIN 50454-2:1994-10  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide

DIN 50446:1995-09  DIN

Estado: Withdrawn / 2019-01

Testing of materials for semiconductor technology - Determination of defect types and defect densities of silicon epitaxial layers

Número de resultados: 118

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