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Convertidores de semiconductores. Requisitos generales y convertidores conmutados por red. Parte 1-1: Especificación de los requisitos básicos (Ratificada por la Asociación Española de Normalización en junio de 2024.)

Printed electronics - Part 203: Materials - Semiconductor ink

Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

Printed electronics - Part 203: Materials - Semiconductor ink

Semiconductor converters - General requirements and line commutated converters - Part 1-1: Specification of basic requirements

Semiconductor converters - General requirements and line commutated converters - Part 1-1: Specification of basic requirements

Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method

Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor

Semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guidelines

Semiconductor converters - General requirements and line commutated converters - Part 1-2: Application guidelines

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor, and Insulation Shielding Materials

Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)

Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 2: Silicon-dioxide coating, optical method

Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 8: Determination of 33 elements in high-purity sulfuric acid by ICP-MS

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram

Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C<(Index)1>-C<(Index)3>-hydrocarbons in gaseous hydrogen chloride by gaschromatography

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

Testing of materials for semiconductor technology - Determination of anions in weak acids

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NH<(Index)4>F) and in etching mixtures of high-purity ammonium fluoride solution containing hydrofluoric acid

Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods