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DIN EN 62047-14:2012-10

DIN EN 62047-14:2012-10

Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012); German version EN 62047-14:2012

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14: Méthode de mesure des limites de formage des matériaux à couche métallique (CEI 62047-14:2012); Version allemande EN 62047-14:2012

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 14: Verfahren zur Ermittlung der Grenzformänderung metallischer Dünnschichtwerkstoffe (IEC 62047-14:2012); Deutsche Fassung EN 62047-14:2012

Fecha:
2012-10 /Active
ICS:

31.080.01 - Semiconductor devices in general

31.220.01 - Electromechanical components in general

Equivalencias internacionales:

EN 62047-14 (2012-04)

IEC 62047-14 (2012-02)

Relación con otras normas DIN:

Reemplaza a: DIN EN 62047-14 (2010-10)

Resumen:
This part of DIN EN 62047 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 µm to 300 µm. The metallic film materials described herein are typically used in electric components, MEMS and micro-devices.
Keywords:
Definitions, Electrical engineering, Form changes, Forming forces, Forming method, Material behaviour, Materials, Metal films, Metallic, Microelectronics, Microsystem techniques, Properties, Semiconductor devices, System engineering, Testing, Thickness, Thin films, Thin-film technology

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