DIN EN 62047-12:2012-06

Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 12: Méthode d'essai de fatigue en flexion des matériaux en couche mince utilisant les vibrations à la résonance des structures à systèmes microélectromécaniques (MEMS) (CEI 62047-12:2011); Version allemande EN 62047-12:2011

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 12: Verfahren zur Prüfung der Biege-Ermüdungsfestigkeit von Dünnschichtwerkstoffen unter Verwendung der Resonanzschwingungen bei MEMS-Strukturen (IEC 62047-12:2011); Deutsche Fassung EN 62047-12:2011

Información:

Fecha:

2012-06 /Active

Idiomas Disponibles:

Alemán

ICS:

31.080.01 - Semiconductor devices in general

31.220.01 - Electromechanical components in general

Equivalencias internacionales:

EN 62047-12 (2011-10)

IEC 62047-12 (2011-09)

Relación con otras normas DIN:

Reemplaza a: DIN IEC 62047-12 (2010-05)

Resumen:

This document specifies a method for fatigue testing using the resonant vibration of the microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This document applies to vibrating structures ranging in size from 10 µm to 1000 µm in the plane direction and from 1 µm to 100 µm in thickness, and test materials measuring under 1 mm in length, under 1 mm in width, and between 0,1 µm and 10 µm in thickness.

Keywords:

Bending strength, Definitions, Electrical engineering, Fatigue, Fatigue limit, Materials, Microelectronics, Microsystem techniques, Resonance, Samples, Semiconductor devices, System engineering, Testing, Testing devices, Testing system, Thin-film technology

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