IEEE C62.35-2010
IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components
| Fecha edición: |
2010-08-31
Anulada
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|---|---|
| Fecha cancelación: | 2010-08-31 |
| Idiomas disponibles: | Inglés |
| Keywords: | avalanche breakdown diode|avalanche junction semiconductor|breakdown voltage|clamping communication circuits|impulse|limiting|power circuits|silicon avalanche diode (SAD)|surge|surge-protective device (SPD)|surge protector|stand-by current|transient voltage suppressor (TVS)|zener |
| Scope: | Revision Standard - Superseded. Superseded by C62.59-2019. Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips. |
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Anulaciones Normas |
Anula a IEEE C62.35-1987 |










